At After Market Industrials, you can find the items listed with the NSN 5962-01-302-0502. We have an array of related part numbers including 5962-8403611B3A, CY6116-55LMB, 84036113A, 84036113X, IDT6116SA55L28B, and many others in stock and ready for purchase at any time. When you need superior quality NSN parts and components, contact the experts at After Market Industrials. Browse our various NSN 5962-01-302-0502 part lists at your leisure and take note of any items of interest. When you are ready, we invite you to take advantage of our Instant RFQ service, which will allow you to request competitive quotes for any featured products. Within 15 minutes of receiving and reviewing a completed Request for Quote (RFQ) form, a dedicated representative will reach out with a customized solution that keeps your unique parameters in mind. For additional questions, call or email us directly; we are available around the clock!
| Item Name | Microcircuit Memory |
| Federal Supply Group (FSG) | 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| NIIN | 01-302-0502 (013020502) |
| NCB Code | USA (01) |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 060 INCHES MINIMUM AND 0 100 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-55 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND WENABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
| MEMORY | CRHL | BIT QUANTITY16384 |
| MEMORY | CSWJ | WORD QUANTITY2048 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 LEADLESS |
| 5930-00-236-2231 (5930002362231) | 5905-00-624-7424 (5905006247424) | 5910-00-052-2420 (5910000522420) | 5910-00-893-0444 (5910008930444) |
| 5910-00-519-6261 (5910005196261) | 5962-01-264-2646 (5962012642646) | 5930-01-458-1260 (5930014581260) | 5935-01-091-0991 (5935010910991) |
| 5910-01-058-6065 (5910010586065) | 5930-00-438-6771 (5930004386771) | 5985-00-938-2734 (5985009382734) | 5975-00-707-8036 (5975007078036) |
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