Get a Quote for Part 141638-0008 having NSN 5962-01-154-0770 Manufactured by Bae Systems Information And Electronic Systems Integration Inc

Mfg Part Number: 141638-0008	Alternate P/N: 1416380008	NSN : 5962-01-154-0770
NIIN : 011540770	CAGE Code : 19397	Manufacturer: Bae Systems Information And Electronic Systems Integration Inc
Item Name : Microcircuit Memory	FSC : 5962 Microcircuits Electronic

Thank you for your interest in the Microcircuit Memory components we have available on After Market Industrials. This particular Bae Systems Information And Electronic Systems Integration Inc item is listed alongside the NSN 5962-01-154-0770 and part number 141638-0008 for your reference. With current availability for this product, we encourage you to utilize our Instant RFQ service in order to receive a competitive quote within 15 minutes or less of you submitting a Request For Quote form. At After Market Industrials, we are backed by our rapid lead times and cost savings, allowing all of our customers to meet their operational deadlines. More than that, we thoroughly vet our products prior to shipping.

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NSN Information for Part Number 141638-0008 with NSN 5962-01-154-0770, 5962011540770

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-154-0770 Item Description: Microcircuit Memory	5962	011540770	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
141638-0008	C	2	3

Characteristics Data of NSN 5962-01-154-0770, 5962011540770

MRC	Criteria	Characteristic
MEMORY	ABKW	OVERALL HEIGHT0 357 INCHES NOMINAL
MEMORY	ADAQ	BODY LENGTH2 030 INCHES MINIMUM AND 2 080 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 515 INCHES MINIMUM AND 0 600 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 217 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 5 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE0 0 TO 70 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND PROGRAMMABLE AND BIDIRECTIONAL AND WCLOCK
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN35 INPUT
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CXCY	PART NAME ASSIGNED BY CONTROLLING AGENCYMICROPROCESSOR
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC225 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 225 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEPROGRAMMABLE
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT