Get a Quote for Part 5807811P26 having NSN 5962-01-214-0931 Manufactured by Bae Systems Information And Electronic Systems Integration Inc

Mfg Part Number: 5807811P26	NSN : 5962-01-214-0931	NIIN : 012140931
CAGE Code : 94117	Manufacturer: Bae Systems Information And Electronic Systems Integration Inc	Item Name : Microcircuit Memory
FSC : 5962 Microcircuits Electronic

Thank you for your interest in the Microcircuit Memory components we have available on After Market Industrials. This particular Bae Systems Information And Electronic Systems Integration Inc item is listed alongside the NSN 5962-01-214-0931 and part number 5807811P26 for your reference. With current availability for this product, we encourage you to utilize our Instant RFQ service in order to receive a competitive quote within 15 minutes or less of you submitting a Request For Quote form. At After Market Industrials, we are backed by our rapid lead times and cost savings, allowing all of our customers to meet their operational deadlines. More than that, we thoroughly vet our products prior to shipping.

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NSN Information for Part Number 5807811P26 with NSN 5962-01-214-0931, 5962012140931

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-214-0931 Item Description: Microcircuit Memory	5962	012140931	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
5807811p26	2	2	5

Characteristics Data of NSN 5962-01-214-0931, 5962012140931

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 840 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 185 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING739 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATIONRECEIVING SETCOUNTERMEASURES ANSLR-16A
MEMORY	CBBL	FEATURES PROVIDEDPROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND 3-STATE OUTPUT
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN6 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT