| Mfg Part Number: 9966-CDJX | Alternate P/N: 9966CDJX | NSN : 5962-01-332-0715 |
| NIIN : 013320715 | CAGE Code : K0656 | Manufacturer: Bae Systems Operations Limited Dba Bae Systems Plc |
| Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
Thank you for your interest in the Microcircuit Memory components we have available on After Market Industrials. This particular Bae Systems Operations Limited Dba Bae Systems Plc item is listed alongside the NSN 5962-01-332-0715 and part number 9966-CDJX for your reference. With current availability for this product, we encourage you to utilize our Instant RFQ service in order to receive a competitive quote within 15 minutes or less of you submitting a Request For Quote form. At After Market Industrials, we are backed by our rapid lead times and cost savings, allowing all of our customers to meet their operational deadlines. More than that, we thoroughly vet our products prior to shipping.
Take time in looking through our expansive catalogs and you will find that the NSN 5962-01-332-0715 can be found listed under CAGE Code K0656. We also have numerous other NSN parts, all of which are sourced from leading global manufacturers like Bae Systems Operations Limited Dba Bae Systems Plc. To begin the purchasing process, fill out and submit a quote request that includes all of your part requirements and see why customers continually rely on us as their go-to sourcing solution. For additional questions, call or email us directly; we are on standby for our customers.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-332-0715 Item Description: Microcircuit Memory | 5962 | 013320715 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 9966-Cdjx | 2 | 2 | 3 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND BIPOLAR |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
| MEMORY | ADAU | BODY HEIGHT0 150 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 18 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
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