Mfg Part Number: 5962-3829410MXX | Alternate P/N: 59623829410MXX | NSN : 5962-01-466-0645 |
NIIN : 014660645 | CAGE Code : 3DTT2 | Manufacturer: Pyramid Semiconductor Corp |
Item Name : Microcircuit Memory | FSC : 5962 Microcircuits Electronic |
Thank you for your interest in the Microcircuit Memory components we have available on After Market Industrials. This particular Pyramid Semiconductor Corp item is listed alongside the NSN 5962-01-466-0645 and part number 5962-3829410MXX for your reference. With current availability for this product, we encourage you to utilize our Instant RFQ service in order to receive a competitive quote within 15 minutes or less of you submitting a Request For Quote form. At After Market Industrials, we are backed by our rapid lead times and cost savings, allowing all of our customers to meet their operational deadlines. More than that, we thoroughly vet our products prior to shipping.
Take time in looking through our expansive catalogs and you will find that the NSN 5962-01-466-0645 can be found listed under CAGE Code 3DTT2. We also have numerous other NSN parts, all of which are sourced from leading global manufacturers like Pyramid Semiconductor Corp. To begin the purchasing process, fill out and submit a quote request that includes all of your part requirements and see why customers continually rely on us as their go-to sourcing solution. For additional questions, call or email us directly; we are on standby for our customers.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-466-0645 Item Description: Microcircuit Memory | 5962 | 014660645 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
5962-3829410mxx | 5 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
SR-1 | MANUFACTURERS CODE | 67268 |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
SR-1 | SPEC/STD CONTROLLING DATA | |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON |
FEAT | SPECIAL FEATURES | DATA RETENTION - YES/ACCESS TIME - 45 NS |
CSWJ | (NON-CORE DATA) WORD QUANTITY | 8192 |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC |
SR-1 | NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | 5962-38294 |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
AGAV | III END ITEM IDENTIFICATION | NUCLEAR POWER PLANTS |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
SR-1 | DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | 5962-3829410MXA |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
CZER | MEMORY DEVICE TYPE | RAM |
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